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IXTA1N80P - Power MOSFET

Key Features

  • z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription for IXTA1N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA1N80P. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 1...

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TA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 14Ω TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight G S (TAB) GD S (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-252 TO-251 (TO-220) Maximum Ratings 800 800 V V ±20 V ±30 V 1A 2A 1A 75 mJ 5 42 -55 ... +150 150 -55 ... +150 300 260 1.13 / 10

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