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IXTA2N80P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD FC S Md B Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 4 2 100 5 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g 2.50 g 3.00 g Symbol Test Conditions O (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings BVDSS VGS = 0V, ID = 250μA 800 V.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTA2N80P N-Channel MOSFET INCHANGE
IXYS Corporation Logo IXTA2N80 High Voltage MOSFET IXYS Corporation
INCHANGE Logo IXTA2N80 N-Channel MOSFET INCHANGE

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