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IXTA6N50P - Power MOSFET

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99447E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTA 6N50P IXTP 6N50P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25.

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Full PDF Text Transcription for IXTA6N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA6N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EA...

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D25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50µA IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS =

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