IXTC110N055T Description
55 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.3 9.0 m Ω ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain.
IXTC110N055T Key Features
- easy to drive and to protect 175 °C Operating Temperature
IXTC110N055T is Power MOSFET manufactured by IXYS .
55 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.3 9.0 m Ω ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain.