Overview: Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 55 V 78 A 9.0 mΩ Symbol
V DSS
VDGR
VGSM
ID25 ILRMS I
DM
IAR EAS
dv/dt
P D
TJ TJM Tstg
TL T
SOLD
VISOL
FC
Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 55 V 55 V ± 20 V TC = 25°C Package Current Limit, RMS T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω T C = 25°C 78 A 75 A 600 A 25 A 500 mJ 3 V/ns 100 W -55 ... +175 °C 175 °C -55 ... +175 °C 1.6 mm (0.062 in.) from case for 10 s 300 Plastic body for 10 seconds 260 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS 2500 Mounting force 11..65/2.5..15 °C °C V
N/lb. 2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 5 μA 250 μA
4.3 9.
