IXTC160N10T Description
2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min.
IXTC160N10T Key Features
- easy to drive and to protect 175 °C Operating Temperature
IXTC160N10T is Power MOSFET manufactured by IXYS .
2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min.