Overview: Preliminary Technical Information TrenchMVTM IXTC160N10T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS
ID25 =
RDS(on) ≤ 100 83 7.5 V A mΩ Symbol
VDSS VDGR
VGSM
ID25 IL IDM
IAR EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD VISOL
FC Weight Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Transient Maximum Ratings 100 V 100 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω
TC = 25°C 83 A 75 A 430 A 25 A 500 mJ 3 V/ns 140 W -55 ... +175 °C 175 °C -55 ... +175 °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS 300 °C 260 °C 2500 V Mounting force 11..65/2.5..15 N/lb. 2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 100 V VGS(th) VDS = VGS, ID = 250 μA 2.5 4.5 V IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA IDSS VDS = VDSS VGS = 0 V TJ = 150°C 5 μA 250 μA RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 6.5 7.
