* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull
IXTC36P15P Datasheet (116.97 KB)
IXTC36P15P
IXYS
116.97 KB
Power mosfet.
Preliminary Technical Information PolarPTM Power MOSFET (Electrically Isolated Tab) IXTC36P15P IXTR36P15P VDSS = -150V ID25 = - 22A RDS(on) ≤ 120mΩ.
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