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IXTH02N250 - High Voltage Power MOSFETs

Download the IXTH02N250 datasheet PDF. This datasheet also covers the IXTA02N250 variant, as both devices belong to the same high voltage power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA02N250-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH02N450HV High Voltage Power MOSFET
IXTH03N400 High Voltage Power MOSFETs
IXTH102N15T Power MOSFET
IXTH102N20T Power MOSFET
IXTH10N100D2 Depletion Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb.