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IXYS
IXYS

IXTH102N15T Datasheet Preview

IXTH102N15T Datasheet

Power MOSFET

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IXTH102N15T pdf
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS =
ID25 =
RDS(on)
150V
102A
18mΩ
TO-3P (IXTQ)
GS
(TAB)
GD S
(TAB)
G DS
(TAB)
G
D
S
(TAB)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C RGS = 1MΩ
Continuous
Transient
Maximum Ratings
150
150
± 20
± 30
V
V
V
V
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS , TJ 175°C
TC = 25°C
102
75
300
51
750
10
455
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300 °C
260 °C
Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65/2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ.
Max.
150 V
3.0 5.0 V
± 200 nA
5 μA
250 μA
18 mΩ
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99661B(10/08)



IXYS
IXYS

IXTH102N15T Datasheet Preview

IXTH102N15T Datasheet

Power MOSFET

No Preview Available !

IXTH102N15T pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
RthJC
RthCH
(TO-220)
(TO-3P & TO-247)
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Characteristic Values
Min. Typ. Max.
50 80
S
5220
685
95
pF
pF
pF
20 ns
14 ns
25 ns
22 ns
87 nC
23 nC
31 nC
0.33 °C/W
0.50 °C/W
0.25 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
VSD IF = 100A, VGS = 0V, Note 1
trr
IRM
QRM
IF = 51A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
102 A
400 A
1.3 V
97 ns
8.4 A
409 nC
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXTH102N15T
Description Power MOSFET
Maker IXYS
Total Page 7 Pages
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IXTH102N15T pdf
IXTH102N15T Datasheet PDF
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