IXTH110N10L2 Description
100 V 2.5 4.5 V ±100 nA 5 μA 50 μA 18 mΩ G DS D (Tab) TO-268 (IXTT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain.
IXTH110N10L2 is Power MOSFET manufactured by IXYS .
100 V 2.5 4.5 V ±100 nA 5 μA 50 μA 18 mΩ G DS D (Tab) TO-268 (IXTT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain.