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IXYS

IXTH11N80 Datasheet Preview

IXTH11N80 Datasheet

MegaMOS FET

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MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
ID25
11 A
13 A
RDS(on)
0.95
0.80
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
I
D25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
11N80
13N80
11N80
13N80
800 V
800 V
±20 V
±30 V
11 A
13 A
44 A
52 A
PD
TJ
TJM
Tstg
Md
Weight
TC = 25°C
Mounting torque
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V
DSS
VGS(th)
IGSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA
GS D
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs,
800
2
11N80
13N80
V
4.5 V
±100 nA
250 µA
1 mA
0.95
0.80
Applications
q Switch-mode and resonant-mode
power supplies
q Motor controls
q Uninterruptible Power Supplies (UPS)
q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
915380F (5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629




IXYS

IXTH11N80 Datasheet Preview

IXTH11N80 Datasheet

MegaMOS FET

No Preview Available !

IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
g
fs
C
iss
Coss
Crss
td(on)
t
r
td(off)
tf
Qg(on)
Qgs
Q
gd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 10 V; I = 0.5 • I , pulse test
DS D D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
8 14
4500
310
65
S
pF
pF
pF
V = 10 V, V = 0.5 • V , I = 0.5 I
GS
DS
DSS D
D25
RG = 2 Ω, (External)
20 50
33 50
63 100
32 50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
145 170
30 45
55 80
nC
nC
nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
11N80
13N80
11 A
13 A
ISM Repetitive;
11N80
pulse width limited by T 13N80
JM
44 A
52 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
t
rr
I
F
=
I,
S
-di/dt
=
100
A/µs,
V
R
=
100
V
800 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A2 2.2 2.6
b 1.0 1.4
b 1.65 2.13
1
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AA (IXTM) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter
Min. Max.
A 6.4 11.4
A1 3.42
b .97 1.09
D 22.22
e 10.67 11.17
e1 5.21 5.71
L 7.93
p 3.84 4.19
p1 3.84 4.19
q 30.15 BSC
R 13.33
R1 4.77
s 16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675


Part Number IXTH11N80
Description MegaMOS FET
Maker IXYS
Total Page 4 Pages
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