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IXTH13N80 Datasheet, IXYS

IXTH13N80 fet equivalent, megamos fet.

IXTH13N80 Avg. rating / M : 1.0 rating-14

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IXTH13N80 Datasheet

Features and benefits

q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to.

Application

q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Adv.

Image gallery

IXTH13N80 Page 1 IXTH13N80 Page 2 IXTH13N80 Page 3

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