Overview: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 150 160 9.6 V A mΩ Symbol
VDSS V
DGR
VGSM
I
D25
ILRMS IDM I
A
EAS
dv/dt
Pd TJ TJM Tstg
T L
TSOLD
M d
Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1MΩ Transient T = 25°C C
Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
T = 25°C C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C 1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds
Mounting torque Maximum Ratings TO-247 150 V 150 V ± 30 V 160 A 75 A 430 A G D S (TAB) 5 A G = Gate D = Drain 1.0 J S = Source TAB = Drain 10
830
-55 ... +175 175
-55 ... +175 V/ns
W
°C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 1 mA 2.5 5.0 V IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA I
DSS V =V DS DSS VGS = 0 V TJ = 150°C 25 μA 300 μA RDS(on) VGS = 10 V, ID = 0.5 • ID25, Note 1 8.0 9.
