Overview: Preliminary Technical Information TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH300N04T2 VDSS = ID25 =
RDS(on) ≤ 40V 300A 2.5mΩ TO-247 Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold
M d
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 40 V 40 V ± 20 V 300 A 160 A 900 A 100 A 600 mJ 480 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g Characteristic Values Min. Typ. Max. 40 V 2.0 4.0 V ±200 nA 5 μA 150 μA 2.
