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IXTH32N65X - Power MOSFET

Download the IXTH32N65X datasheet PDF. This datasheet also covers the IXTP32N65X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(ON) and QG.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP32N65X-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH32N65X N-Channel MOSFET INCHANGE
IXTH300N04T2 N-Channel MOSFET INCHANGE
IXTH30N50 Power MOSFET IXYS Corporation
IXTH30N50 N-Channel MOSFET INCHANGE
IXTH30N50L N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH32P20T Power MOSFET
IXTH300N04T2 Power MOSFET
IXTH30N45 N-Channel MOSFET
IXTH30N50L Power MOSFET
IXTH30N50L2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 650 650 V V 30 V 40 V 32 A 64 A 30 V/ns 500 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 5.5 g 6.