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IXYS

IXTH40N50L2 Datasheet Preview

IXTH40N50L2 Datasheet

Power MOSFET

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LinearL2TM
Power MOSFET
w/Extended FBSOA
IXTT40N50L2
IXTQ40N50L2
IXTH40N50L2
VDSS = 500V
ID25 = 40A
RDS(on) 170m
N-Channel Enhancement Mode
Avalanche rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247&TO-3P)
TO-268
TO-3P
TO-247
Maximum Ratings
500
V
500
V
20
V
30
V
40
A
80
A
40
A
2
J
540
W
-55 to +150
C
+150
C
-55 to +150
C
300
°C
260
°C
1.13/10
Nm/lb.in
4.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
100 nA
50 A
300 A
170 m
TO-268 (IXTT)
G
TO-3P (IXTQ)
S
D (Tab)
G
D
S
TO-247 (IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75C
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
© 2017 IXYS CORPORATION, All rights reserved
DS100100B(6/17)




IXYS

IXTH40N50L2 Datasheet Preview

IXTH40N50L2 Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247&TO-3P)
IXTT40N50L2
Characteristic Values
Min. Typ. Max.
11
15 19 S
10.4
nF
655
pF
155
pF
50
ns
133
ns
127
ns
44
ns
320
nC
64
nC
198
nC
0.23 C/W
0.25
C/W
IXTQ40N50L2
IXTH40N50L2
Safe Operating Area Specification
Symbol
Test Conditions
SOA
VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s
Min.
320
Typ.
Max.
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, -di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max.
40 A
160 A
1.5 V
500
ns
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXTH40N50L2
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXTH40N50L2 Datasheet PDF





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