IXTH420N04T2 Description
+175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 40 V 1.5 3.5 V ±200 nA 10 μA 300 μA 1.6 2.0 mΩ TO-247 G DS (TAB) G = Gate D = Drain S = Source TAB = Drain.
- Part: IXTH420N04T2
- Manufacturer: IXYS (official site)
- Size: 164.96 KB
IXTH420N04T2 is Power MOSFET manufactured by IXYS .
+175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 40 V 1.5 3.5 V ±200 nA 10 μA 300 μA 1.6 2.0 mΩ TO-247 G DS (TAB) G = Gate D = Drain S = Source TAB = Drain.