Overview: Advance Technical Information TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH420N04T2 VDSS = ID25 =
RDS(on) ≤ 40V 420A 2.0mΩ Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold
M d
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque Maximum Ratings 40 V 40 V ± 20 V 420 A 160 A 1050 A 200 A 960 mJ 935 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 100A, Note 1 Characteristic Values Min. Typ. Max. 40 V 1.5 3.5 V ±200 nA 10 μA 300 μA 1.6 2.
