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IXTH440N055T2 - Power MOSFET

Key Features

  • z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low R DS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID =.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 VDSS ID25 RDS(on) = 55V = 440A ≤ 1.8mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 55 55 ± 20 ± 30 440 160 1200 200 1.5 1000 -55 ... +175 175 -55 ... +175 W °C °C °C °C °C Nm/lb.in. g g A A J V V V A A V G D S D (Tab) TO-268 (IXTT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z 1.6mm (0.062in.