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Advance Technical Information
Standard Power MOSFET
N-Channel Enhancement Mode
IXTH 48N20
VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ
Symbol Test Conditions
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V 200 V ±20 V ±30 V
48 A 192 A
48 A 30 mJ 1.0 J
5 V/ns
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
275 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
IXTH48N20 Datasheet
