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IXYS

IXTH50N25T Datasheet Preview

IXTH50N25T Datasheet

Trench Gate Power MOSFET

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Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on)
250V
50A
50mΩ
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAS
EAS
PD
TJ
TJM
Tstg
TL
FMCd
Weight
GS
(TAB)
G
DS
(TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Transient
Maximum Ratings
250
250
± 30
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
50
130
5
1.5
400
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-263
10..65 / 2.2..14.6
A
A
A
J
W
°C
°C
°C
°C
°C
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
250
35
V
V
± 100 nA
1 μA
150 μA
50 mΩ
GDS
TO-3P (IXTQ)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
z High speed power switching
applications
© 2007 IXYS CORPORATION, All rights reserved
Downloaded from Elcodis.com electronic components distributor
DS99346A(10/07)
http://www.Datasheet4U.com




IXYS

IXTH50N25T Datasheet Preview

IXTH50N25T Datasheet

Trench Gate Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1
35 58
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
4000
410
60
pF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, V DS = 0.5 • V DSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
14
25
47
25
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
78
19
22
nC
nC
nC
RthJC
RthCH
TO-220
TO-3P, TO-247
0.50
0.25
0.31 °C/W
°C/W
° C/W
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 25A, -di/dt = 250A/ μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
50 A
200 A
1.5 V
166 ns
23 A
1.9 μC
Notes: 1: Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Downloaded from Elcodis.com electronic components distributor


Part Number IXTH50N25T
Description Trench Gate Power MOSFET
Maker IXYS
Total Page 6 Pages
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