IXTH52N65X - Power MOSFET

IXYS (now Littelfuse)

Key Features

International Standard Package.
Low RDS(ON) and QG.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXTH52N65X power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXTH52N65X
Manufacturer	IXYS (now Littelfuse)
File Size	151.83 KB
Description	Power MOSFET
Datasheet	IXTH52N65X Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXTH52N65X	N-Channel MOSFET	INCHANGE
IXTH52P10P	P-Channel MOSFET	IXYS Corporation
IXTH52P10P	P-Channel MOSFET	INCHANGE
IXTH50N20	MegaMOS FET	IXYS Corporation
IXTH50N20	N-Channel MOSFET	INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXTH50N25T	Trench Gate Power MOSFET
IXTH50N30	Power MOSFET
IXTH02N250	High Voltage Power MOSFETs
IXTH02N450HV	High Voltage Power MOSFET
IXTH03N400	High Voltage Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

X-Class Power MOSFET N-Channel Enhancement Mode IXTH52N65X VDSS = ID25 = RDS(on) 650V 52A 68m Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 52 A 104 A 660 W -55 ... +150 150 -55 ... +150 300 260 C C C °C °C 1.13/10 Nm/lb.in 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.