Overview: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I
D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 800 V 800 V ±20 V ±30 V 6A 24 A 180 W -55 ... +150 150
-55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on) Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA V DS = V, GS I
D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C V = 10 V, I = 0.5 I GS D D25 6N80 6N80A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 800 2 V 4.5 V
±100 nA
250 µA 1 mA
1.8 Ω 1.
