Overview: Preliminary Technical Information Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 =
RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAS EAS
PD
TJ TJM Tstg
TL TSOLD
Md
F C
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 86 A 75 A 190 A 10 A 1.5 J 540 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 11..65 / 2.5..14.6 N/lb. 6.0 g 5.5 g 4.0 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V I
DSS V =V DS DSS VGS = 0V TJ = 125°C R DS(on) V GS = 10V, I
D = 0.5 • I,
D25 Notes 1, 2 Characteristic Values Min. Typ. Max.
