Datasheet Summary
Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T
VDSS = ID25 =
RDS(on) ≤
150V 90A 20mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS dV/dt
TJ TJM Tstg
TL TSOLD
Md FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
TC = 25°C
- Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = TC =
25°C 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
150 150
± 30
90 75 250
4 750
-55 ... +175 175
-55 ......
