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IXTK120N20P - PolarHT Power MOSFET

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99207E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 40 63 S DS D D25 VGS = 0 V, VDS =.

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Full PDF Text Transcription for IXTK120N20P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTK120N20P. For precise diagrams, and layout, please refer to the original PDF.

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Condition...

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D25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C 120 A 75 A 300 A 60 A 60 mJ 2.0 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C TL T SOLD 1.6 mm (0.062 in.

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