IXTK75N30 Description
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
IXTK75N30 Key Features
- Low R HDMOSTM process DS (on)
- Rugged polysilicon gate cell structure -International standard package -Fast switching times
IXTK75N30 is Power MOSFET manufactured by IXYS .
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.