Overview: High Voltage MOSFET IXTP05N100M
(Electrically Isolated Tab) VDSS = ID25 =
RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 700 mA 3 A 1 A 100 mJ 3 V/ns 25 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) VGS = 0V, ID = 250μA VDS = VGS, ID = 25μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 375mA, Note 1 Characteristic Values Min. Typ. Max. 1000 2.5 V 4.5 V ±100 nA 25 μA 500 μA 15 17 Ω OVERMOLDED TO-220 (IXTP...
