Download IXTP110N055T2 Datasheet PDF
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IXTP110N055T2 Description

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M.

IXTP110N055T2 Key Features

  • International Standard Packages
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier
  • High Current Handling Capability
  • ROHS pliant
  • High Performance Trench
  • High Power Density
  • Easy to Mount
  • Space Savings