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IXTP200N075T - Power MOSFET

Download the IXTP200N075T datasheet PDF. This datasheet also covers the IXTA200N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTA200N075T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP200N075T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP200N075T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ S...

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ement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 75 V 75 V ± 20 200 75 540 25 750 V A A A A mJ 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP200N075T N-Channel MOSFET INCHANGE

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