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IXTP200N085T - Power MOSFET

Download the IXTP200N085T datasheet PDF. This datasheet also covers the IXTA200N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTA200N085T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP200N085T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP200N085T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ...

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ncement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.

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Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP200N085T N-Channel MOSFET INCHANGE

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