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IXYS
IXYS

IXTP24P085T Datasheet Preview

IXTP24P085T Datasheet

Power MOSFET

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IXTP24P085T pdf
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA24P085T
IXTP24P085T
VDSS =
ID25 =
RDS(on)
- 85V
- 24A
65mΩ
TO-263 AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-263
Maximum Ratings
- 85
- 85
V
V
±15 V
±25 V
- 24 A
- 80 A
- 24 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 85 V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
65 mΩ
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS99969B(01/13)



IXYS
IXYS

IXTP24P085T Datasheet Preview

IXTP24P085T Datasheet

Power MOSFET

No Preview Available !

IXTP24P085T pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
10 16
S
2090
243
117
pF
pF
pF
18 ns
26 ns
53 ns
26 ns
41 nC
17 nC
11 nC
0.50
1.5 °C/W
°C/W
IXTA24P085T
IXTP24P085T
TO-263 Outline
Pins:
1 - Gate
2,4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = - 24A, VGS = 0V, Note 1
trr
QRM
IRM
IF = -12A, -di/dt = -100A/μs
VR = - 43V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 24 A
- 96 A
-1.5 V
40
72
- 3.6
ns
nC
A
TO-220 Outline
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXTP24P085T
Description Power MOSFET
Maker IXYS
Total Page 6 Pages
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IXTP24P085T pdf
IXTP24P085T Datasheet PDF
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