* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V
IXTP28P065T Datasheet (200.35 KB)
IXTP28P065T
IXYS
200.35 KB
Power mosfet.
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXT.
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