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IXTP4N60P - PolarHV Power MOSFET

Download the IXTP4N60P datasheet PDF. This datasheet also covers the IXTA4N60P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA4N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP4N60P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP4N60P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL...

View more extracted text
60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C 4 A TC = 25C, Pulse Width Limited by TJM 10 A TC = 25C OBSOLE4 TE A TC = 25C IS  IDM, VDD  VDSS, TJ  150°C IXTY4N1150060P mJ V/ns TC = 25C IXTA4N9060P W IXTP4N60P -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-25

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP4N60P N-Channel MOSFET INCHANGE

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