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IXTP50N25T - Trench Gate Power MOSFET

Download the IXTP50N25T datasheet PDF. This datasheet also covers the IXTA50N25T variant, as both devices belong to the same trench gate power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTA50N25T-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR V GSM ID25 IDM IA EAS PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 A 130 A TC = 25°C TC = 25°C 5 A 1.5 J TC = 25°C 400 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 s 300 °C 260 °C Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Mounting Force (TO-263) 10..65 / 2.2..14.6 Nmlb.in.

Key Features

  • z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z High Power Density z Easy to Mount z Space Savings.

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