IXTP80N10T
IXTP80N10T is Power MOSFET manufactured by IXYS.
- Part of the IXTA80N10T comparator family.
- Part of the IXTA80N10T comparator family.
Features z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220
300 260 1.13 / 10 2.5 3.0
International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z
Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ± 20V, VDS = 0V VDS = 105V, VGS= 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 105 2.5 5.0 ± 200 5 150 V V n A μA μA
Applications z z z
VGS = 10V, ID = 25A, Note 1 & 2
14 mΩ z z z
Automotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve Train Systems
© 2009 IXYS CORPORATION, All Rights Reserved
DS99648A(11/09)
Free Datasheet http://..
IXTA80N10T IXTP80N10T
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.50 VGS = 10V, VDS = 0.5
- VDSS, ID = 25A Resistive Switching Times VGS = 10V, VDS = 0.5
- VDSS, ID = 10A RG = 15Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5
- ID25, Note 1 Characteristic Values Min. Typ. Max. 33 55 3040 420 90 31 54 40 48 60 21 15 0.65 S p F p F p F ns ns ns ns n C n C n C °C/W °C/W
Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 1. Gate 2. Drain 3. Source
TO-263 (IXTA) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise...