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PolarHTTM Power MOSFET
IXTQ 120N15P IXTT 120N15P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
150 V 120 A 16 mΩ
Symbol
VDSS V
DGR
VDSS VGSM
ID25 ID(RMS) I
DM
IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 175° C
T J
=
25°
C
to
175°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C External lead current limit
T C
=
25°
C,
pulse
width
limited
by
T JM
TC = 25° C
TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
120
A
75
A
260
A
60
A
60
mJ
2.0
J
10
V/ns
600
W
-55 ... +175
°C
175
°C
-55 ...
IXTQ120N15P Datasheet
