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IXTQ120N20P - PolarHT Power MOSFET

Download the IXTQ120N20P datasheet PDF. This datasheet also covers the IXTK120N20P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99207E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 40 63 S DS D D25 VGS = 0 V, VDS =.

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Note: The manufacturer provides a single datasheet file (IXTK120N20P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ120N20P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ120N20P. For precise diagrams, and layout, please refer to the original PDF.

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Condition...

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D25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C 120 A 75 A 300 A 60 A 60 mJ 2.0 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C TL T SOLD 1.6 mm (0.062 in.

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