Download the IXTQ30N50P datasheet PDF.
This datasheet also covers the IXTH30N50P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for IXTQ30N50P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ30N50P. For precise diagrams, and layout, please refer to the original PDF.
P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220, PLUS220SMD TO-268 TO-3P TO-247 500 V 500 V ±30
IXTQ30N50P Datasheet
