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IXTQ40N50Q Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: High Current Power MOSFET Q-Class IXTQ 40N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Data Sheet VDSS ID25 RDS(on) = 500 V = 40 A = 0.16 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque Maximum Ratings 500 V 500 V ±30 V ±40 V 40 A 160 A 40 A 50 mJ 2.0 mJ 5 V/ns 500 W -55 to +150 °C 150 °C -55 to +150 °C 300 °C 1.13/10 Nm/lb.in.

Key Features

  • z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 500 VDS = VGS, ID = 4 mA 2.5 VGS = ±30 VDC, VDS = 0 VDS = VDS.

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Similar Datasheet

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