Overview: Preliminary Technical Information PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ480P2 VDSS = ID25 = RDS(on) = trr(typ) 500V 52A 120m 400ns Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V 30 V 40 V 52 A 150 A 52 A 1.5 J 10 V/ns 960 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.
