IXTQ60N10T Description
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 100 V 2.5 4.5 V ± 100 nA 1 μA 100 μA 14.8 18.0 mΩ G D S G = Gate S = Source Tab D = Drain Tab = Drain.
- Part: IXTQ60N10T
- Manufacturer: IXYS (official site)
- Size: 170.07 KB
IXTQ60N10T is Power MOSFET manufactured by IXYS .
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 100 V 2.5 4.5 V ± 100 nA 1 μA 100 μA 14.8 18.0 mΩ G D S G = Gate S = Source Tab D = Drain Tab = Drain.