Overview: Advance Technical Information TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ
TO-3P Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 100 V 100 V ± 30 V 60 A 180 A 10 A 500 mJ 176 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Note 1 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V ± 100 nA 1 μA 100 μA 14.8 18.
