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IXYS
IXYS

IXTQ74N20P Datasheet Preview

IXTQ74N20P Datasheet

PolarHT Power MOSFET

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IXTQ74N20P pdf
PolarHTTM
Power MOSFET
IXTQ 74N20P
IXTT 74N20P
N-Channel Enhancement Mode
Avalanche Energy Rated
V = 200 VDSS
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ID25 = 74
A
=RDS(on) 34 m
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
TO-3P (IXTQ)
200 V
200 V
± 20
± 30
74
200
60
40
1.0
V
V
G
A DS
A
A
mJ TO-268 (IXTT)
J
(TAB)
10 V/ns
480
-55 ... +175
175
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
34 m
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99119C(08/05)



IXYS
IXYS

IXTQ74N20P Datasheet Preview

IXTQ74N20P Datasheet

PolarHT Power MOSFET

No Preview Available !

IXTQ74N20P pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 44
3300
800
190
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
23 ns
21 ns
60 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
107 nC
24 nC
52 nC
(TO-3P)
0.21
0.31 K/W
K/W
IXTQ 74N20P
IXTT 74N20P
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TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
74 A
180 A
1.5 V
trr IF = 25 A
-di/dt = 100 A/µs
QRM VR = 100 V
160 ns
3.0 µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585


Part Number IXTQ74N20P
Description PolarHT Power MOSFET
Maker IXYS
Total Page 5 Pages
PDF Download
IXTQ74N20P pdf
IXTQ74N20P Datasheet PDF
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