IXTQ76N25T Datasheet | IXYS

TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings  20  30 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC =...