IXTQ88N28T mosfet equivalent, power mosfet.
z Trench gate construction for low R
DS(on)
z International standard package z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space .
VDSS =
ID25 = ≤ RDS(on)
280V 88A 44mΩ
Symbol
VDSS VDGR
VGSM
ID25 IDRMS IDM
PD TJ TJM Tstg T
L
TSOLD
Md
Weight
Test C.
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