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This datasheet also covers the IXTH88N30P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for IXTQ88N30P (Reference)
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IXTQ88N30P. For precise diagrams, and layout, please refer to the original PDF.
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) ...
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P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-264 TO-3P & TO-268 Maximum Ratings 300 V 300 V G D S ±20 V TO-264 (IXTK) ±30 V 88 A 75 A 220 A 60 A 60
IXTQ88N30P Datasheet
