IXTR200N10P Description
Advanced Technical Information .. +150 G = Gate S = Source D = Drain.
IXTR200N10P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)
IXTR200N10P is Power MOSFET manufactured by IXYS .
Advanced Technical Information .. +150 G = Gate S = Source D = Drain.