Datasheet Specifications
- Part number
- IXTR32P60P
- Manufacturer
- IXYS
- File Size
- 134.26 KB
- Datasheet
- IXTR32P60P-IXYS.pdf
- Description
- Power MOSFET
Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR32P60P VDSS = ID25 = ≤ RDS(on) - 600V - 18A 385mΩ ISOPLUS247 E153432 Symbol .
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High PoApplications
* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2012 IXYS CORPORATION, All Rights Reserved DS99992B(12/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = -16A, Note 1 Ciss Coss Crss VGS = 0V, VDIXTR32P60P Distributors
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