• Part: IXTT34N65X2HV
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 191.41 KB
IXTT34N65X2HV Datasheet (PDF) Download
IXYS
IXTT34N65X2HV

Key Features

  • High Voltage Package
  • Low RDS(ON) and QG
  • Avalanche Rated
  • Low Package Inductance Advantages
  • High Power Density
  • Easy to Mount
  • Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5
  • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 650 V
  • 0 5.0 V 100 nA 10 A 150 A 96 m