Datasheet4U Logo Datasheet4U.com

IXTT50N30 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V ±20 V ±30 V 50 A 200 A 50 A 50 mJ 1.5 J 5 V/ns 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Characteristic Values Min. Typ. Max. 300 V 2.0 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • z International standard packages z Low RDS (on).

IXTT50N30 Distributor & Price

Compare IXTT50N30 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXTT50P10 Standard Power MOSFET
IXTT02N450HV High Voltage Power MOSFET
IXTT10N100D2 Depletion Mode MOSFET
IXTT10P60 Power MOSFET
IXTT110N10L2 Power MOSFET
IXTT120N15P Power MOSFET
IXTT12N140 Power MOSFET
IXTT12N150 High Voltage Power MOSFET
IXTT12N150HV N-Channel Power MOSFET
IXTT140N075L2HV Power MOSFET