IXTT76P10THV Description
+150 C 300 °C 260 °C 1.13 /10 Nm/lb.in.
IXTT76P10THV Key Features
- International Standard Packages
- Avalanche Rated
- Extended FBSOA
- Fast Intrinsic Diode
- Low RDS(ON) and QG
- Easy to Mount
- Space Savings
IXTT76P10THV is Power MOSFET manufactured by IXYS .
+150 C 300 °C 260 °C 1.13 /10 Nm/lb.in.