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IXTV102N20T - Power MOSFET

Download the IXTV102N20T datasheet PDF. This datasheet also covers the IXTH102N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH102N20T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTV102N20T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTV102N20T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 2...

View more extracted text
IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings TO-247 (IXTH) 200 V ± 30 V 102 A 75 A 250 A G D S 5A 1.2 J TO-3P (IXTQ) 7 V/ns (TAB) 750 W G

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